Ukufika kwetekhnoloji ye-Gallium Nitride (i-GaN) iguqule imbonakalo yomhlaba yeeadaptha zamandla, ivumela ukudalwa kweetshaja ezincinci kakhulu, zikhaphukhaphu, kwaye zisebenza ngakumbi kunezabo zemveli ezise-silicon. Njengoko iteknoloji ikhula, siye sabona ukuvela kwezizukulwana ezahlukeneyo ze-semiconductors ye-GaN, ngakumbi i-GaN 2 kunye ne-GaN 3. Ngelixa zombini zibonelela ngophuculo olukhulu ngaphezu kwe-silicon, ukuqonda ama-nuances phakathi kwezi zizukulwana zibini kubalulekile kubathengi abafuna izisombululo zokutshaja eziphucukileyo nezisebenzayo. Eli nqaku lijonga umahluko ophambili phakathi kwe-GaN 2 kunye ne-GaN 3 tshaja, iphonononga ukuqhubela phambili kunye neenzuzo ezibonelelwa ngokuphindaphindwa kwamva nje.
Ukuxabisa umahluko, kubalulekile ukuqonda ukuba "i-GaN 2" kunye ne "GaN 3" ayingomagama asemgangathweni jikelele achazwa libhunga lolawulo elinye. Endaweni yoko, bamele ukuqhubela phambili kuyilo kunye neenkqubo zokwenziwa kwee-transistors zamandla e-GaN, zihlala zinxulunyaniswa nabavelisi abathile kunye nobuchwepheshe babo bobunini. Ngokubanzi, i-GaN 2 imele inqanaba langaphambili letshaja ze-GaN ezinokuthengiseka, ngelixa i-GaN 3 iquka izinto ezintsha kunye nophuculo lwamva nje.
IiNdawo eziphambili zoMahluko:
Umahluko ophambili phakathi kweetshaja ze-GaN 2 kunye ne-GaN 3 zihlala kwezi ndawo zilandelayo:
1. Ukutshintsha iFrequency kunye nokusebenza ngokufanelekileyo:
Enye yeenzuzo eziphambili ze-GaN ngaphezulu kwe-silicon kukukwazi ukutshintshela kumaza aphezulu kakhulu. Le frequency ephezulu yokutshintsha ivumela ukusetyenziswa kwamacandelo amancinci amancinci (njengeziguquli kunye ne-inductors) ngaphakathi kwetshaja, igalelo elibalulekileyo kubukhulu bayo obuncitshisiweyo kunye nobunzima. Itekhnoloji ye-GaN 3 ngokubanzi ityhala la maza okutshintsha nangaphezulu kune-GaN 2.
Ukunyuka kwamaza okutshintsha kuyilo lwe-GaN 3 kudla ngokuguqulela ukusebenza kakuhle koguqulo lwamandla. Oku kuthetha ukuba ipesenti enkulu yamandla ombane atsalwa kwi-outlet eludongeni ihanjiswa kwisixhobo esiqhagamshelweyo, kunye namandla amancinci alahlekileyo njengobushushu. Ukusebenza okuphezulu akunciphisi inkcitho yamandla kuphela kodwa kunegalelo ekusebenzeni okupholileyo kwetshaja, okunokuthi kwandise ubomi bayo kwaye kuphuculwe ukhuseleko.
2. Ulawulo lweThermal:
Ngelixa i-GaN ngokwendalo ivelisa ubushushu obuncinci kune-silicon, ukulawula ubushushu obuveliswe kumanqanaba aphezulu amandla kunye nokutshintsha amaza kuhlala kungumba obalulekileyo woyilo lwetshaja. Ukuqhubela phambili kwe-GaN 3 kudla ngokubandakanya iindlela eziphuculweyo zolawulo lobushushu kwinqanaba letshiphu. Oku kunokubandakanya uyilo lwetshiphu ephuculweyo, iindlela eziphuculweyo zokulahla ubushushu ngaphakathi kwe-GaN transistor ngokwayo, kunye nokubanakho ukudityaniswa kokuva ubushushu kunye neendlela zokulawula.
Ulawulo olungcono lwe-thermal kwiitshaja ze-GaN 3 zibavumela ukuba basebenze ngokuthembekileyo kwimveliso yamandla ephezulu kunye nemithwalo ezinzileyo ngaphandle kokufudumeza ngokugqithiseleyo. Oku kuluncedo ngakumbi ukutshaja izixhobo ezilambele amandla njengeelaptops kunye neetafile.
3. Ukudityaniswa nokuntsonkotha:
Itekhnoloji ye-GaN 3 ihlala ibandakanya inqanaba eliphezulu lokudibanisa ngaphakathi kwe-IC yamandla e-GaN (I-Integrated Circuit). Oku kunokubandakanya ukubandakanya ukulawulwa kweesekethe ezininzi, iimpawu zokukhusela (ezifana ne-over-voltage, over-current, and over-temperature protection), kunye nabaqhubi besango ngokuthe ngqo kwi-chip ye-GaN.
Ukonyuka kokudityaniswa kuyilo lwe-GaN 3 kunokukhokelela kuyilo olulula lulonke lwetshaja enamalungu ambalwa angaphandle. Oku akuncitshi kuphela ibhili yezixhobo kodwa kunokuphucula ukuthembeka kunye negalelo ngakumbi kwi-miniaturization. Ulawulo olunobugocigoci ngakumbi oludityaniswe kwiitshiphusi ze-GaN 3 lunokwenza ukuba unikezelo lwamandla oluchaneke ngakumbi nolusebenzayo kwisixhobo esiqhagamshelweyo.
4. Ukuxinana kwamandla:
Ubuninzi bamandla, bulinganiswa ngeewathi nge-intshi nganye ye-cubic (W/in³), sisixhobo esingundoqo sokuvavanya ukubumbana kweadaptha yamandla. Itekhnoloji yeGaN, ngokubanzi, ivumela ukuxinana kwamandla aphezulu kakhulu xa kuthelekiswa nesilicon. Ukuqhubela phambili kwe-GaN 3 ngokuqhelekileyo kuyawatyhala la manani oxinaniso lwamandla nangakumbi.
Ukudityaniswa kwee-frequencies eziphezulu zokutshintsha, ukusebenza kakuhle, kunye nokuphucula ulawulo lobushushu kwiitshaja ze-GaN 3 zenza ukuba abavelisi benze iiadaptha ezincinci nezinamandla ngakumbi xa kuthelekiswa nabasebenzisa itekhnoloji ye-GaN 2 kwimveliso yamandla efanayo. Le yinzuzo ebalulekileyo yokuphatheka kunye nokulula.
5. Iindleko:
Njengayo nayiphi na itekhnoloji evelayo, izizukulwana ezitsha zihlala ziza neendleko eziphezulu zokuqala. Amacandelo e-GaN 3, ahambele phambili kakhulu kwaye abenakho ukusebenzisa iinkqubo ezintsonkothileyo zokwenziwa kwemveliso, anokuba nexabiso eliphakamileyo kunee-GaN 2 ezisebenza nazo. Nangona kunjalo, njengoko imveliso isonyuka kwaye itekhnoloji iba yinto eqhelekileyo, umahluko weendleko kulindeleke ukuba ucuthe ngokuhamba kwexesha.
Ukuchonga iiTshaja ze-GaN 2 kunye ne-GaN 3:
Kubalulekile ukuqaphela ukuba abavelisi abasoloko bebhala ngokucacileyo iitshaja zabo njenge "GaN 2" okanye "GaN 3." Nangona kunjalo, ungahlala ujonga ukuveliswa kwetekhnoloji ye-GaN esetyenziswayo ngokusekwe kwiinkcukacha zetshaja, ubungakanani, kunye nomhla wokukhutshwa. Ngokubanzi, iitshaja ezitsha eziqhayisa ngamandla oxinaniso lwamandla aphezulu kakhulu kunye neempawu eziphucukileyo kunokwenzeka ukuba zisebenzise i-GaN 3 okanye izizukulwana ezizayo.
Izinto eziluncedo zokukhetha itshaja ye-GaN 3:
Ngelixa iitshaja ze-GaN 2 sele zibonelela ngezibonelelo ezibalulekileyo ngaphezulu kwesilicon, ukukhetha itshaja ye-GaN 3 kunokubonelela ngezibonelelo ezingakumbi, ezibandakanya:
- Noyilo oluNcinci kunye noKhaphukhaphu: Yonwabela ukuphatheka okukhulu ngaphandle kokuncama amandla.
- Ukwandiswa kokuSebenza: Nciphisa inkcitho yamandla kunye nokunciphisa amatyala ombane.
- Ukuphuculwa kokuSebenza kweThermal: Yiba namava okusebenza okupholileyo, ngakumbi ngexesha lemisebenzi efuna ukutshaja.
- Ukutshaja okuKhawulezayo okunokwenzeka (Ngokungathanga ngqo): Ukusebenza okuphezulu kunye nolawulo olungcono lwe-thermal kunokuvumela itshaja ukuba igcine imveliso yamandla ephezulu ixesha elide.
- Imiba eYongezelelekileyo: Ukuxhamla kwiindlela ezidityanisiweyo zokhuseleko kunye nonikezelo lwamandla oluphuculweyo.
Ukutshintsha ukusuka kwi-GaN 2 ukuya kwi-GaN 3 kubonisa inyathelo elibalulekileyo eliya phambili kwi-evolution ye-GaN ye-adaptha ye-adapter yamandla. Ngelixa ezi zizukulwana zozibini zibonelela ngophuculo olukhulu ngaphezulu kweetshaja zesilicon zemveli, i-GaN 3 ihlala inikezela ukusebenza okuphuculweyo ngokwemigaqo yokutshintsha rhoqo, ukusebenza kakuhle, ulawulo lobushushu, ukudibanisa, kwaye ekugqibeleni, ukuxinana kwamandla. Njengoko itekhnoloji iqhubeka nokukhula kwaye ifikeleleka ngakumbi, iitshaja ze-GaN 3 zikulungele ukuba ngowona mgangatho ubalaseleyo wokusebenza okuphezulu, unikezelo lwamandla abambeneyo, ukubonelela abathengi ngamava okutshaja aluncedo ngakumbi kuluhlu lwabo olwahlukeneyo lwezixhobo zombane. Ukuqonda le yantlukwano kuxhobisa abathengi ukuba benze izigqibo ezinolwazi xa bekhetha iadaptha yabo yamandla elandelayo, baqinisekise ukuba bayaxhamla kwinkqubela phambili yamva nje yokutshaja itekhnoloji.
Ixesha lokuposa: Mar-29-2025